SAMSUNG
SAMSUNG 883 DCT 3.84TB 2.5' Enterprise SSD SATA3 550R/520W MB/s 98K/28K IOPS 5466TBW V-NAND 3-bit MLC 2 Mil Hrs MTBF Data Center Server 5yrs
                            Regular price
                            $2104.99
                          
                          
                            Regular price
                            
                                                                      
                                        $2483.99
                                    
                                                                    
                              Sale price
                            $2104.99
                          
                        
                      Intel 883 DCT 3.84TB 2.5' Enterprise SSD SATA3 550R/520W MB/s 98K/28K IOPS 5466TBW V-NAND 3-bit MLC 2 Mil Hrs MTBF Data Center Server 5yrs Samsung SATA Enterprise SSD for BusinessDelivering optimized performance, a high quality of service and end-to-end data protection for servers that require enhanced data reliability. Samsung's 883 DCT SSDs are an ideal solution for servers that need enhanced data reliability to safeguard critical data. From optimized performance and a high Quality of Service (QoS), to power-loss protection and end-to-end data protection, they deliver a highly reliable enterprise storage solution using the SATA interface. And they're backed by a 5-year limited warranty up to 5,466 TBW. Easy to upgrade from legacy storage within your existing infrastructure thanks to the 2.5-inch form factor and SATA interface End-to-end data protection to help ensure consistency over the entire data transfer path Power-loss protection helps to prevent data corruption in the case of power failure Designed for optimized performance in server applications thanks to Samsung's proprietary 3-bit MLC V-NAND Series	883 DCT Interface	SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface Data Center	Yes Storage	 Capacity 	3.8TB Features	 Sequential Read Speed 	Up to 550 MB/s Sequential Write Speed 	Up to 520 MB/s Random Read Speed 	Up to 98,000 IOPS Random Write Speed 	Up to 28,000 IOPS Controller	Samsung MARU Controller NAND Flash	Samsung V-NAND 3-bit MLC Memory Cache	Samsung 4GB Low Power DDR4 SDRAM Trim Support	Yes AES Encryption	AES 256-bit Encryption (Class 0) S.M.A.R.T. Support	Yes GC (Garbage Collection)	Auto Garbage Collection Algorithm WWN Support	Yes Power Consumption (W) 	Active (Read/Write): 3.6 W / 2.3 W 	Idle: Max. 1.3 W Voltage	5 V ± 5% Allowable voltage Reliability (MTBF)	2.0 Million Hours Reliability (MTBF) Operating Temperature	0 - 70 ℃ Operating Temperature Shock	1,500 G & 0.5 ms (Half sine)